In order to search for states specific to insulator/metal interfaces, we have studied epitaxially grown interfaces with element-selective near edge x-ray absorption fine structure. An extra peak is observed below the bulk edge onset for LiCl films on Cu and Ag substrates. The nature of chemical bonds as probed by x-ray photoemission spectroscopy and Auger electron spectroscopy remains unchanged, so we regard this as evidence for metal-induced gap states (MIGS) formed by the proximity to a metal, rather than local bonds at the interface. The dependence on the film thickness shows that the MIGS are as thin as one monolayer. An ab initio electronic structure calculation supports the existence of the MIGS that are strongly localized at the interface.
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http://dx.doi.org/10.1103/PhysRevLett.90.196803 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27514, United States.
Two-dimensional (2D) transition metals enable the elimination of metal-induced gap states and Fermi-level pinning in field-effect transistors (FETs), offering an advantage over conventional metal contacts. However, transition metal substrates typically exhibit nonoriented behaviors, leading to the inability to achieve monolingual responses with P- or N-type semiconductors. Here we devise symmetry engineering in an oxidized architectural MXene, termed OXene, which implements the exploiting and coupling of additional out-of-plane electron conduction and built-in polar structures.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics, Yonsei University, Seoul 03722, Republic of Korea.
To achieve the commercialization of two-dimensional (2D) semiconductors, the identification of an appropriate combination of 2D semiconductors and three-dimensional (3D) metals is crucial. Furthermore, understanding the van der Waals (vdW) interactions between these materials in thin-film semiconductor processes is essential. Optimizing these interactions requires precise control over the properties of the vdW interface through specific pre- or post-treatment methods.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2024
Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
Designing devices with low contact resistance, especially those based on carbon-based materials, is becoming increasingly important. In this work, we investigated the electronic structure and transport properties of two-types of structures based on carbon nanotubes connecting graphene electrodes by combining density functional theory with the non-equilibrium Green's function method. The directly connected structure exhibits ohmic contact and has a lower contact resistance compared to the typical van der Waals-connected structure.
View Article and Find Full Text PDFSci Rep
November 2024
Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan.
Novel van der Waals (vdW) contacts formed by layered BiTe are found effective in improving the performance of WSe pMOSFETs. As compared with conventional transition metal-based Ni/Au S/D contacts, over 10 times on-state current improvement is achieved. vdW interface formation between BiTe and WSe is confirmed by X-ray diffraction analysis and scanning transmission electron microscope observation.
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