SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately identified. Also, image simulations with the target imaging performance revealed oxygen atomic columns between silicon-silicon bonds. The present instrument is of potential use for semiconductor science and technology, even for the analysis of oxygen atoms at interfaces.
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http://dx.doi.org/10.1093/jmicro/52.1.69 | DOI Listing |
Phys Rev Lett
September 2004
Universität Dortmund, Lehrstuhl für Experimentelle Physik I, Otto-Hahn-Strasse 4, 44221 Dortmund, Germany.
The local environment of Si atoms at the interface between a thermally grown SiO2 film and Si(100) was studied by angle-scanned photoelectron diffraction. Experimental photoelectron diffraction patterns for each Si oxidation state were obtained from the results of least squares fitting on Si 2p core-level spectra. A comparison of the diffraction patterns with multiple-scattering calculations including an R-factor analysis was performed.
View Article and Find Full Text PDFJ Am Chem Soc
April 2003
Institute of Isotopes and Surface Chemistry, Chemical Research Center, Hungarian Academy of Sciences, Department of Surface Chemistry and Catalysis, Konkoly Th. M. út 29/33, H-1525 Budapest, Hungary.
Nanosize gold particles were prepared by Ar(+) ion implantation of 10-nm thick gold film deposited onto a SiO(2)/Si(100) wafer possessing no catalytic activity in the CO oxidation. Along with size reduction the valence band of the gold particles and the actual size were determined by ultraviolet- and X-ray photoelectron spectroscopy (UPS, XPS) and by transmission electron microscopy (TEM) as well as atomic force microscopy (AFM), respectively. The catalytic activity was determined in the CO oxidation.
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