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http://dx.doi.org/10.1002/anie.200250189 | DOI Listing |
Nanotechnology
January 2025
Qingdao University, Ningxia Road 308, Qingdao, Shandong, 266071, CHINA.
Graphitic carbon nitride (g-C3N4) has gained significant attention as a promising nonmetallic semiconductor photocatalyst due to its photochemical stability, favorable electronic properties, and efficient light absorption. Nevertheless, its practical applications are hindered by limitations such as low specific surface area, rapid recombination of photogenerated charge carriers, poor electrical conductivity, and restricted photo-response ranges. This review explores recent advancements in the synthesis, modification and application of g-C3N4 and its nanocomposites with a focus on addressing these challenges.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 34114, Korea.
In this work, we present a facile and straightforward approach for fabricating highly stretchable photodetectors based on AgS and TiCT MXene hybrid materials. These devices exhibit exceptional mechanical resilience, maintaining stable electrical and optical performance even after 10 000 cycles of 30% strain. The incorporation of MXene not only enhances the device's electrical durability but also ensures the retention of conductivity under significant mechanical deformation, positioning MXene as a critical material for the advancement of flexible electronics.
View Article and Find Full Text PDFResearch (Wash D C)
January 2025
Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics, Northeast Normal University, Changchun, China.
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as the leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. As a p-type oxide material, CuO exhibits outstanding theoretical photoelectric conversion efficiency and broadband photoresponse.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008, India.
A simple one-step deposition-precipitation method was used to synthesize highly active and well-defined CuNi alloy bimetallic nanoparticles supported on h-BN/g-CN. The nanocomposite was applied for hydrogen gas evolution via seawater splitting and photocatalytic chloramphenicol (CHP) removal. Through TEM and synchrotron studies, the formation of CuNi alloy and uniform distribution of CuNi bimetallic nanoparticles on the h-BN/g-CN surface was observed.
View Article and Find Full Text PDFDalton Trans
January 2025
Department of Engineering and Materials Physics, ICT-IOC Bhubaneswar, 751013, India.
With the demand for wearable and low-energy consumption devices, it is essential to fabricate high-performance and fast-response photodetectors using an effective, easy and low-cost technique. In this regard, MoSe-based transition metal dichalcogenides are promising materials for their potential applications in future nanoscale electronic/optoelectronic devices. The current work demonstrates the optical, electrical, and photoresponsivity performance of VMoSe ( = 0, 0.
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