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We study the nonconserved coarsening kinetics of a reconstructed semiconductor surface. The domain size evolution is obtained in situ by time-resolved surface x-ray diffraction. The system exhibits four equivalent domain types with two nonequivalent types of domain boundaries. Small domains are prepared by molecular beam epitaxy deposition of one GaAs layer. We find the correlation lengths of the domain size distribution to depend on time as l is proportional to t(0.42+/-0.05) in the half-order reflections and l is proportional to t(0.22+/-0.05) in the quarter-order reflections. The fraction of the higher energy domain boundaries increases as lnt.
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