We report on a new type of correlated nanometer-scale pinning structure observed in a melt-processed (Nd0.33Eu0.38Gd0.28)Ba(2)Cu(3)O(y) (NEG-123). It consists of NEG/Ba-rich clusters in the stoichiometric NEG-123 matrix forming a lamellar array with a period of a few nanometers. These lamellas appear within regular twins, thus representing their fine substructure-sometimes straight, sometimes wavy. This new material structure correlates well with the significant enhancement of pinning at high fields, represented by irreversibility field above 14 T at 77 K (B parallel c). We believe that the new pinning medium enables one to significantly broaden the limits for high-field applications.
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http://dx.doi.org/10.1103/PhysRevLett.89.237001 | DOI Listing |
Science
January 2025
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano), Hysitron Applied Research Center in China (HARCC) and Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
Higher strength and higher ductility are desirable for structural materials. However, ultrastrong alloys inevitably show decreased strain-hardening capacity, limiting their uniform elongation. We present a supranano (<10 nanometers) and short-range ordering design for grain interiors and grain boundary regions, respectively, in fine-grained alloys based on vanadium, cobalt, and nickel, with additions of tungsten, copper, aluminum, and boron.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Manufacture Science and Engineering, Key Laboratory of Testing Technology for Manufacturing Process, Ministry of Education, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China.
Ice accretion caused by freezing rain or snowstorms is a common phenomenon in cold climates that seriously threatens the safety and reliability of telecommunication lines and other overhead networks. Various anti-icing strategies have been demonstrated through surface engineering to delay ice formation. However, existing anti-icing surfaces still encounter several challenges; for example, surfaces are prone to ice-pinning formation due to the impact of supercooled droplets, which leads to a loss of anti-icing effectiveness.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan Campus, 170 Kessels Road, Brisbane, QLD 4111, Australia.
The evaporation dynamics of sessile droplets on re-entrant microstructures are critical for applications in microfluidics, thermal management, and self-cleaning surfaces. Re-entrant structures, such as mushroom-like shapes with overhanging features, trap air beneath droplets to enhance non-wettability. The present study examines the evaporation of a water droplet on silicon carbide (SiC) and silicon dioxide (SiO) re-entrant structures, focusing on the effects of material composition and solid area fraction on volume reduction, contact angle, and evaporation modes.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
School of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel.
Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study.
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