Direct evidence of the nonuniformly canted state of the spin-flop phase induced by a magnetic field applied to Fe/Cr(100) superlattices is obtained by polarized neutron reflectometry. It is unambiguously demonstrated that the magnetization of the alternating Fe layers is twisted through the multilayer stack proving a stable noncollinear configuration. The maximal tilt at the end layers progressively reduces towards the center of the multilayer. The set of tilt angles is deduced from a model-free data evaluation employing the supermatrix routine. Spin-flip off-specular scattering is determined by the in-plane magnetization fluctuations and is fitted by a theoretical model of domains.
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http://dx.doi.org/10.1103/PhysRevLett.89.167203 | DOI Listing |
Nano Lett
January 2025
Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States.
The antiferromagnetic topological insulator MnBiTe (MBT) exhibits an ideal platform for investigating unique topological and magnetic properties. While the transport characteristics of magnetic phase transitions in the MBT materials have been extensively studied, the understanding of their mechanical properties and magneto-mechanical coupling remains limited. Here, we utilize nanoelectromechanical systems to probe the intrinsic magnetism in MBT thin flakes through magnetostrictive coupling.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
We systematically investigate the magnetization and thermodynamic responses associated with the antiferromagnetic (AFM) transitions in magnetic semiconductor EuInAs. The linear thermal expansion measurements reveal thataxis expands whereasandaxes contract with the onset of the two AFM transitions atTN1andTN2. Using a simplified mean-field model incorporating AFM exchange interactions, easy-axis anisotropy, and Zeeman coupling, we analyze the potential magnetic structure change associated with the spin-flop and spin-flip transitions in field.
View Article and Find Full Text PDFNano Lett
December 2024
Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China.
With a nontrivial topological band and intrinsic magnetic order, two-dimensional (2D) MnBiTe-family materials exhibit great promise for exploring exotic quantum phenomena and potential applications. However, the synthesis of 2D MnBiTe-family materials via chemical vapor deposition (CVD), which is essential for advancing device applications, still remains a significant challenge since it is difficult to control the reactions among multi-precursors and form pure phases. Here, we report a controllable synthesis of high-quality magnetic topological insulator MnBiTe and MnBiTe multilayers via an evaporation-rate-controlled CVD approach.
View Article and Find Full Text PDFSci Rep
October 2024
Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea.
Structural chirality and magnetism, when intertwined, can have profound implications on materials properties. Using X-ray imaging and spectroscopic measurements that leverage the natural and magnetic circular dichroic effects present in magnetized chiral crystal structures, we probe the interplay between chirality and magnetism across the field-induced spin-flop transition of Dy ferroborate, ( ) . Deconvolution of natural and magnetic circular dichroic signals at the Fe K and Dy L absorption edges of the non-centrosymmetric structure was enabled by use of tunable temperature and magnetic field, providing access to element-specific magnetic information across the spin-flop transition.
View Article and Find Full Text PDFJ Phys Condens Matter
August 2024
Departamento de Física, Universidade Federal de Viçosa, 36570-900 Viçosa, Minas Gerais, Brazil.
Antiferromagnetic (AF) compounds possess distinct characteristics that render them promising candidates for advancing the application of spin degree of freedom in computational devices. For instance, AF materials exhibit minimal susceptibility to external magnetic fields while operating at frequencies significantly higher than their ferromagnetic counterparts. However, despite their potential, there remains a dearth of understanding, particularly concerning certain aspects of AF spintronics.
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