Diffusion studies in non-oxide ceramics: analytical aspects of the use of ion implanted stable tracers and SIMS.

The physical and chemical properties of complex non-oxide ceramic materials require advanced methods of diffusivity determination. In this study, we present a method based on the high-dose ion implantation of stable tracers in combination with secondary ion mass spectroscopy for depth profiling. The analytical basics, advantages and problems of the method are discussed for two examples of complex materials, the Si-B-C-N precursor ceramics and the Ti-based transition metal diborides. We demonstrate that is possible to measure the temperature dependence of diffusivities, especially for ceramic systems with low diffusivities, for systems that contain elements for which no suitable radioactive tracers exist for extended measurements.