Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime.

On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/ variant Planck's over 2pi >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant Fsigma0 which controls the sign of drho/dT.