A continuous surface wetting transition, pinned to a solid-liquid-liquid-vapor tetra coexistence point, is studied by x-ray reflectivity in liquid Ga-Bi binary alloys. The short-range surface potential is determined from the measured temperature evolution of the wetting film. The thermal fluctuations are shown to be insufficient to induce a noticeable breakdown of mean-field behavior, expected in short-range-interacting systems due to their d(u) = 3 upper critical dimensionality.
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http://dx.doi.org/10.1103/PhysRevLett.89.035502 | DOI Listing |
ACS Appl Mater Interfaces
November 2024
Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China.
Grain boundary (GB) engineering includes grain size and GB segregation. Grain size has been proven to affect the electrical properties of Mg(Sb, Bi) at low temperatures. However, the formation mechanism of GB segregation and what kind of GB segregation is beneficial to the performance are still unclear.
View Article and Find Full Text PDFNanoscale Adv
January 2024
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits. In general, synthesizing the GaAsBi NWs results in uncontrollable metamorphic structures and spontaneous Bi-containing droplets. Here, we explore the potential of using the droplets as catalysts to form GaAsBi nanowires (hence, the vapor-liquid-solid growth mechanism) on GaAs (111) substrates by molecular beam epitaxy.
View Article and Find Full Text PDFHeliyon
July 2023
Ioffe Institute, Politechnicheskaya 26, St. Petersburg, 194021, Russia.
The development of GaAs based high power side-input photovoltaic converters requires thick (50-100 μm) transparent gradient refraction layers that can be grown by liquid phase epitaxy. Such thick layers can also be used in LED structures. To solve the problem of AlGaAs conductivity reduction at the x∼40% point a five-component, Al-Ga-As-Sn-Bi system is proposed.
View Article and Find Full Text PDFAnal Bioanal Chem
February 2021
School of Environmental and Municipal Engineering, Xi'an University of Architecture and Technology, Xi'an, 710055, Shaanxi, China.
In the process of diagnosis and disease monitoring, it is important to quickly and easily detect protein biomarkers. The strategy reported here is an attempt to prepare BiMoO nanomaterial with new three-dimensional holes morphology surrounded by rod and sheet to construct a simple and sensitive sensing platform, where BiMoO/ionic liquid (IL) composite was modified on the carbon paste electrode (CPE). In order to monitor the assembly process of human IgG immunosensors, a plurality of electrochemical tests such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) was executed.
View Article and Find Full Text PDFNanotechnology
October 2019
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth conditions, which pose severe challenges for planar growth. In this work, we exploit the naturally-Ga-rich environment present inside the metallic droplet of a self-catalyzed GaAs nanowire (NW) to synthesize metastable GaAs/GaAs Bi axial NW heterostructures with high Bi contents.
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