AI Article Synopsis

  • The semiconductor industry aims to produce smaller structures using photolithography, requiring precise dimensional control at the scale of polymer molecules in photoresists.
  • Current technologies, like chemically amplified photoresists, struggle with controlling the reaction-diffusion process due to the inability to measure the reaction front directly.
  • Researchers demonstrate that x-ray and neutron reflectometry can provide nanometer-level measurements of the reaction front, revealing a broad composition profile and showing how the developed film structure changes during processing.

Article Abstract

The continuing drive by the semiconductor industry to fabricate smaller structures using photolithography will soon require dimensional control at length scales comparable to the size of the polymeric molecules in the materials used to pattern them. The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial resolution. However, nanometer-level control of this critical process is limited by the lack of direct measurements of the reaction front. We demonstrate the use of x-ray and neutron reflectometry as a general method to measure the spatial evolution of the reaction-diffusion process with nanometer resolution. Measuring compositional profiles, provided by deuterium-labeled reactant groups for neutron scattering contrast, we show that the reaction front within the material is broad rather than sharply defined and the compositional profile is altered during development. Measuring the density profile, we directly correlate the developed film structure with that of the reaction front.

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Source
http://dx.doi.org/10.1126/science.1072092DOI Listing

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