A fourfold coordinated point defect in silicon.

Phys Rev Lett

Département de Recherche Fondamentale sur la Matière Condensée, SP2M/L_Sim, CEA-Grenoble, 38054 Grenoble cedex 9, France.

Published: June 2002

Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.

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http://dx.doi.org/10.1103/PhysRevLett.88.235501DOI Listing

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