We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an epsilon-GaSe crystal and operated at the 1.960-eV line of a He-Ne laser. We demonstrate that the modulation in an Al-epsilon-GaSe-Cu device results mainly from the Franz-Keldysh effect. Relatively high speed and low operating voltage could make these modulators with Schottky-barrier contacts attractive devices in the red range of the spectrum.
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| http://dx.doi.org/10.1364/ao.41.000148 | DOI Listing |
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