A room temperature sonochemical method for the preparation of GaSb nanoparticles using less hazardous Ga and antimony chloride (SbCl(3)) as the precursors has been described. The formation of GaSb has been confirmed by means of XRD, EDAX, and XPS characterization. TEM and SAED results show that the as-prepared solid consists of nanosized GaSb crystals with sizes in the range 20-30 nm. The photoacoustic spectrum result reveals that the GaSb nanoparticles have a direct band gap of about 1.21 eV. On the basis of the control experiments and the extreme conditions produced by ultrasound, an ultrasound-assisted in-situ reduction/combination mechanism has been proposed to explain the reaction.
Several nanowire properties are strongly dependent on their diameter, which is notoriously difficult to control for III-Sb nanowires compared with other III-V nanowires. Herein environmental transmission electron microscopy is utilized to study the growth of Au nanoparticle seeded GaSb nanowires . In this study, the real time changes to morphology and nanoparticle composition as a result of precursor V/III ratio are investigated.
Thermophotovoltaics (TPVs) require emitters with a regulated radiation spectrum tailored to the spectral response of integrated photovoltaic cells. Such spectrally engineered emitters developed thus far are structurally too complicated to be scalable, are thermally unstable, or lack reliability in terms of temperature cycling. Herein, we report wafer-scale, thermal-stress-free, and wavelength-selective emitters that operate for high-temperature TPVs equipped with GaSb photovoltaic cells.
Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by combining these two approaches-inserting In into the voids of skutterudite Co4Sb12 as well as dispersing nanoparticles (GaSb)-we have synthesized various samples via ball-milling and spark plasma sintering. InSb as the secondary phase of the matrix, mixed with GaSb, forms the solid solution Ga1-xInxSb.
The prior theoretical model shows that GaSb is one of the few non-alloy semiconductors showing phonons ballistic effect in the thermal conductivity. However, no previous literature had been reported on the experimental measurements on the quasi-ballistic thermal transport of the GaSb thin film. In this paper, we employed the time-domain thermoreflectance (TDTR) to study the thermal transport of nanoparticles embedded GaSb thin film.
In this work we investigate the role of quantum confinement in group III-V semiconductor thin films (2D nanostructures). To this end we have studied the electronic structure of nine materials (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb) by means of Density Functional Theory (DFT) calculations using a screened hybrid functional (HSE06). We focus on the structural and electronic properties of bulk and the (110) surfaces, for which we evaluate and rationalize the impact of system size to the band gap and band edge positions.
