Atomic surrounding of Co implanted in AIN at high energy.

J Synchrotron Radiat

Laboratoire pour l'Utilisation du Rayonneent Electromagnétique, Université Paris-Sud, Orsay, France.

Published: March 2001

AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions. X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.

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http://dx.doi.org/10.1107/s0909049500012632DOI Listing

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