Study by X-ray absorption spectroscopy of Si3N4 films after Cu or Fe implantation and thermal treatment.

J Synchrotron Radiat

Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Université Paris-Sud, Orsay, France.

Published: March 2001

Si3N4 amorphous thin layers prepared by sputtering have been implanted either with Cu or with Fe ions. X-ray absorption spectroscopy was performed at the Si K edge to characterise the electronic empty states of p character, the structural state of the initial layers and the modifications around Si induced by implantation and a post-annealing treatment. We show that the energy deposition process mainly leads to a reorganisation of the second coordination shell around Si, i.e. concerns the Si-Si bonds.

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http://dx.doi.org/10.1107/s0909049500012644DOI Listing

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