In situ transmission electron microscopy experiments provide a unique way to investigate in real time the dislocation behaviour at a microscopic scale and to decide which elementary process controls the dislocation glide in semiconductors. In this review the experimental results obtained on different semiconductors are presented and discussed. Particular attention is devoted to the radiation-enhanced glide process.
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| http://dx.doi.org/10.1046/j.1365-2818.2001.00901.x | DOI Listing |
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