AI Article Synopsis
- A titanium film was deposited on a copper substrate using radio frequency magnetron sputtering.
- Cross-sectional thin foils were prepared for transmission electron microscopy (TEM) analysis and were irradiated with electrons at a high voltage while maintaining a temperature of 623 K.
- Observations revealed that the (020)Cu plane at the Cu/Ti interface shifted toward the titanium film, and composition analysis indicated the formation of a Ti3Cu2 diffusion layer.
Article Abstract
Unlabelled: A Ti film was deposited onto a Cu substrate by means of a radio frequency magnetron sputtering
Method: Cross-sectional thin foils for TEM observation were prepared using a focused ion beam. Electron irradiation was carried out using a high-resolution high-voltage electron microscope operated at 1.25 MV. The Cu/Ti interface of the foils was irradiated at 623 K. In-situ observation images during electron irradiation were recorded by a CCD camera with a digital video cassette. The (020)Cu plane on the Cu/Ti interface preferentially moved towards the Ti film with irradiation. Composition analysis of the diffused region showed that its composition corresponded to Ti3Cu2.
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| http://dx.doi.org/10.1046/j.1365-2818.2001.00912.x | DOI Listing |
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