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Inhibition of hydrogen peroxide-induced senescence markers by yeast-derived vacuoles in human lung fibroblasts.
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Graduate School of Semiconductor and Chemical Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-Gu, Jeonju, Jeonbuk 54896, South Korea. Electronic address:
Senescence significantly contributes to aging in various tissues, influenced by factors such as lysosomal alkalinization, which disrupts autophagic flux and accumulates toxic substances. This disruption leads to oxidative stress, increased lysosomal permeability, cellular senescence, and apoptosis. Similar to mammalian lysosomes, S.
View Article and Find Full Text PDFElectronic structures of atomic silicon dimer wires as a function of length.
Nanotechnology
January 2025
Department of Physics, University of Alberta, 4-181 CCIS, University of Alberta, Edmonton, Alberta, T6G 2R3, CANADA.
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units.
View Article and Find Full Text PDFSelective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide.
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFCooling of Semiconductor Devices via Quantum Tunneling.
Phys Rev Lett
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Massachusetts Institute of Technology, Research Laboratory of Electronics, Cambridge, Massachusetts 02139, USA.
Classical transport of electrons and holes in nanoscale devices leads to heating that severely limits performance, reliability, and efficiency. In contrast, recent theory suggests that interband quantum tunneling and subsequent thermalization of carriers with the lattice results in local cooling of devices. However, internal cooling in nanoscale devices is largely unexplored.
View Article and Find Full Text PDFTheory for Dissipative Time Crystals in Coupled Parametric Oscillators.
Phys Rev Lett
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University of Maryland, College Park, Joint Quantum Institute, Condensed Matter Theory Center and, Department of Physics, Maryland 20742-4111, USA.
Discrete time crystals are novel phases of matter that break the discrete time translational symmetry of a periodically driven system. In this Letter, we propose a classical system of weakly nonlinear parametrically driven coupled oscillators as a test bed to understand these phases. Such a system of parametric oscillators can be used to model period-doubling instabilities of Josephson junction arrays as well as semiconductor lasers.
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