Low temperature near-field luminescence studies of localized and delocalized excitons in quantum wires.

J Microsc

Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, D-12489 Berlin, Germany.

Published: April 2001

Excitons in a GaAs quantum wire were studied in high-resolution photoluminescence experiments performed at a temperature of about 10 K with a spatial resolution of 160 nm and a spectral resolution of 100 microeV. We report the observation of quasi-one-dimensional excitons which are delocalized over a length of up to several micrometres along the quantum wire. Such excitons give rise to a 10 meV broad luminescence band, representing a superposition of transitions between different delocalized states. In addition, we find a set of sharp luminescence peaks from excitons localized on a sub150 nm length scale. Theoretical calculations of exciton states in a disordered quasi-one-dimensional potential reproduce the experimental results.

Download full-text PDF

Source
http://dx.doi.org/10.1046/j.1365-2818.2001.00826.xDOI Listing

Publication Analysis

Top Keywords

quantum wire
8
excitons
5
low temperature
4
temperature near-field
4
near-field luminescence
4
luminescence studies
4
studies localized
4
localized delocalized
4
delocalized excitons
4
excitons quantum
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!