The SiO2 gate of an ion-sensitive field-effect transistor, (ISFET), is functionalized with a TiO2 film that includes imprinted molecular sites for 4-chlorophenoxy acetic acid, (1), or 2,4-dichlorophenoxy acetic acid, (2). The functionalized devices that include the imprinted interfaces reveal an impressive selectivity in the sensing of the imprinted substrates Na+ -1 or Na+ -2. The detection limit for Na+ -1 is (5+/-2) x 10(-4) M, which corresponds to 38 mV x dec(-1) in the concentration range of 0.5 to 6 mM. The detection limit for the analysis of Na+ -2 is (1.0+/-0.2) x 10(-5) M, which corresponds to 28 mV dec(-1) in the concentration range 0.1-9.0 mM. The equilibration time of the devices is ca. 5 min.
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