Unexpected dynamics for self-interstitial clusters in silicon.

Phys Rev Lett

Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051, USA.

Published: February 2001

Ab initio molecular-dynamics simulations of self-interstitial clusters in Si show that I2 and the most stable of the I3 (" I(a)(3)") clusters diffuse extremely fast. In these clusters, the I's share a single bond-centered (BC) site. The metastable I(b)(3) cluster involves three adjacent BC sites. Simulations show that the three I's exchange sites with each other, but the center of the defect remains at the same place. Simulations with I1 and I4 show no diffusion on the same time scale.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.86.1247DOI Listing

Publication Analysis

Top Keywords

self-interstitial clusters
8
unexpected dynamics
4
dynamics self-interstitial
4
clusters
4
clusters silicon
4
silicon initio
4
initio molecular-dynamics
4
molecular-dynamics simulations
4
simulations self-interstitial
4
clusters stable
4

Similar Publications

The Primary Irradiation Damage of Hydrogen-Accumulated Nickel: An Atomistic Study.

Materials (Basel)

June 2023

State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China.

Nickel-based alloys have demonstrated significant promise as structural materials for Gen-IV nuclear reactors. However, the understanding of the interaction mechanism between the defects resulting from displacement cascades and solute hydrogen during irradiation remains limited. This study aims to investigate the interaction between irradiation-induced point defects and solute hydrogen on nickel under diverse conditions using molecular dynamics simulations.

View Article and Find Full Text PDF

Voids in face-centered cubic (fcc) metals are commonly assumed to form via the aggregation of vacancies; however, the mechanisms of vacancy clustering and diffusion are not fully understood. In this study, we use computational modeling to provide a detailed insight into the structures and formation energies of primary vacancy clusters, mechanisms and barriers for their migration in bulk copper, and how these properties are affected at simple grain boundaries. The calculations were carried out using embedded atom method (EAM) potentials and density functional theory (DFT) and employed the site-occupation disorder code (SOD), the activation relaxation technique nouveau (ARTn) and the knowledge led master code (KLMC).

View Article and Find Full Text PDF

Molecular dynamics methods were utilized to investigate displacement cascades and tritium diffusion in α-MgT. It was observed from collision cascades results that the stable number of defects weakly depended on temperature, while the peak and stable number of defects linearly increased with increasing the primary knock-on atom energy. The results of the mean square displacement study revealed that defects had a significant impact on tritium diffusion.

View Article and Find Full Text PDF

Free energy calculations in materials science are routinely hindered by the need to provide reaction coordinates that can meaningfully partition atomic configuration space, a prerequisite for most enhanced sampling approaches. Recent studies on molecular systems have highlighted the possibility of constructing appropriate collective variables directly from atomic motions through deep learning techniques. Here we extend this class of approaches to condensed matter problems, for which we encode the finite temperature collective variable by an iterative procedure starting from 0 K features of the energy landscape activation events or migration mechanisms given by a minimum - saddle point - minimum sequence.

View Article and Find Full Text PDF

Quantum de-trapping and transport of heavy defects in tungsten.

Nat Mater

May 2020

Research Centre for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka, Japan.

The diffusion of defects in crystalline materials controls macroscopic behaviour of a wide range of processes, including alloying, precipitation, phase transformation and creep. In real materials, intrinsic defects are unavoidably bound to static trapping centres such as impurity atoms, meaning that their diffusion is dominated by de-trapping processes. It is generally believed that de-trapping occurs only by thermal activation.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!