Stimulated emission from donor transitions in silicon.

Phys Rev Lett

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod GSP-105, 603600, Russia.

Published: May 2000

The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.

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http://dx.doi.org/10.1103/PhysRevLett.84.5220DOI Listing

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