Theory of the fano resonance in the STM tunneling density of states due to a single kondo impurity.

Phys Rev Lett

Department of Physics, Technical University of Budapest, H-1521 Budapest, Hungary and Research Group of the Hungarian Academy of Sciences, Technical University of Budapest, H-1521 Budapest, Hungary.

Published: September 2000

The conduction electron density of states nearby single magnetic impurities, as measured recently by scanning tunneling microscopy (STM), is calculated, taking into account tunneling into conduction electron states only. The Kondo effect induces a narrow Fano resonance in the conduction electron density of states. The line shape varies with the distance between STM tip and impurity, in qualitative agreement with experiments, but is very sensitive to details of the band structure. For a Co impurity the experimentally observed width and shift of the Kondo resonance are in accordance with those obtained from a combination of band structure and strongly correlated calculations.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.85.2557DOI Listing

Publication Analysis

Top Keywords

density states
12
conduction electron
12
fano resonance
8
electron density
8
band structure
8
theory fano
4
resonance stm
4
stm tunneling
4
tunneling density
4
states
4

Similar Publications

Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film.

ACS Appl Mater Interfaces

January 2025

Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.

View Article and Find Full Text PDF

Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties.

ACS Appl Mater Interfaces

January 2025

Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.

Metal-semiconductor contact plays a significant role in devices such as transistors, photoemitters, and photodetectors. Here, the AuIn alloy contact gives a state-of-the-art low (contact resistance) in GeSe devices. The of GeSe-AuIn is measured to be 25 kΩ μm under channel carrier concentration around = 2.

View Article and Find Full Text PDF

X-ray diffraction is ideal for probing the sub-surface state during complex or rapid thermomechanical loading of crystalline materials. However, challenges arise as the size of diffraction volumes increases due to spatial broadening and because of the inability to deconvolute the effects of different lattice deformation mechanisms. Here, we present a novel approach that uses combinations of physics-based modeling and machine learning to deconvolve thermal and mechanical elastic strains for diffraction data analysis.

View Article and Find Full Text PDF

Mechanochemistry and mechanocatalysis are gaining increasing attention as environmentally friendly chemical processes because of their solvent-free nature and scalability. Significant effort has been devoted for studying continuum-scale phenomena in mechanochemistry, such as temperature and pressure gradients, but the atomic-scale mechanisms remain relatively unexplored. In this work, we focus on the mechanochemical reduction of MoO as a case study.

View Article and Find Full Text PDF

The influence of high-intensity electric fields on the stability of polymeric materials is a problem of interest in the design of next-generation energy storage and electronic devices, and for understanding the limits of stability of polymer films exposed to large electric fields generally. Here, we show that the dielectric strength of entangled glassy polymer films increases as an inverse power-law of the film thickness for "ultrathin" films below a micron in thickness. The dielectric strength enhancement in these polymer films becomes as large as ≈2 GV/m in films thinner than 100 nm, but in this thickness regime, the increase of the dielectric strength depends strongly on the polymer mass, sample aging time, and the method of film preparation.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!