Despite the effectiveness of electrical currents in enhancing bone repair, there is little information in the literature on electrical parameters per se. Very little is known about the nature of the conduction mechanism or the current path between the electrodes. Without a better understanding it is difficult to establish meaningful hypotheses at the cellular level and to design relevant experimental protocols. In the present work, a first attempt is made at an in vivo delineation of the current-voltage relationship in the medullary area between two platinum electrodes embedded in the femur, by one of the techniques generally known to stimulate bone growth. At potential differences of less than 1 volt, a rather good ohmic dependence is observed, with an approximate specific resistance of 2 to 5 times 10-5 ohms/cm. At potentials higher than 1 volt, electrolytic processes appear to predominate and there is increasing non-linearity. Experimental techniques involving the adjustment of current through bone tissue assuming an ohmic dependence with little or no associated polarization effects are valid and certainly warrant further investigation.
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http://dx.doi.org/10.1097/00003086-197501000-00045 | DOI Listing |
Phys Chem Chem Phys
January 2025
Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices, Jiangxi Science & Technology Normal University, Nanchang 330018, China.
Owing to their high light absorption coefficient, excellent electronic mobility, and enhanced excitonic effect, two-dimensional (2D) GaN materials hold great potential for applications in optoelectronic and electronic devices. As the metal-semiconductor junction (MSJ) is a fundamental component of semiconductor-based devices, identifying a suitable metal for contacting semiconductors is essential. In this work, detailed first-principles calculations were performed to investigate the contact behavior between the GaN monolayer (ML) and a series of 2D metals MX (M = Nb, Ta, V, Mo, or W; X = S or Se).
View Article and Find Full Text PDFNano Lett
December 2024
Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea.
The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this resistance was unclear. This study focused on dual-gate bilayer graphene (BLG) devices with naturally cleaved edges, examining how edge-etching with an oxygen plasma process affects electron transport.
View Article and Find Full Text PDFNanophotonics
July 2024
Department of Physics, Faculty of Science, Shinshu University, Nagano 390-8621, Japan.
Nanoscale
January 2025
Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen 361005, China.
Acc Chem Res
December 2024
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China.
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