The applicability is examined of ion selective field transistors with photocurable polyurethane membranes to control of the electrolytic composition of dialyzing solutions used in artificial kidney apparatus, and also of plasma in patient treated by chronic hemodialysis. The short- and long-time characteristics of the efficiency of K(+)-selective field transistors in continuous contact with solutions. Comparative testing of such transistors and other sensing systems is made. It is demonstrated that a sufficient reliability of measurements in the range of physiological concentrations in combination with low cost provide the possibility of using K(+)-selective field transistors for monitoring of the potassium concentration both in dialyzing solutions and plasma in patients on chronic hemodialysis treatment.

Download full-text PDF

Source

Publication Analysis

Top Keywords

field transistors
16
polyurethane membranes
8
potassium concentration
8
dialyzing solutions
8
chronic hemodialysis
8
k+-selective field
8
transistors
5
[the ion-selective
4
field
4
ion-selective field
4

Similar Publications

Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques.

View Article and Find Full Text PDF

Borehole strainmeters are essential tools for observing crustal deformation. In long-term observational applications, the dynamic changes in crustal deformation over multi-year scales often exceed the single measurement range of borehole strainmeters. Expanding the measurement range while maintaining high precision is a critical technical challenge.

View Article and Find Full Text PDF

High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes.

Materials (Basel)

January 2025

Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea.

The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality.

View Article and Find Full Text PDF

Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.

Micromachines (Basel)

January 2025

State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.

View Article and Find Full Text PDF

A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission.

Micromachines (Basel)

December 2024

State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi'an University of Electronic Science and Technology, Xi'an 710071, China.

This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!