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This article examines the signification of the principle of constancy in Freud's pre-psychoanalytic drafts and papers and in . It is argued that Freud's principle differs from seemingly similar principles proposed by Breuer and Fechner, and that it constitutes an assumption about the maintaining of a constant amount of mobile biophysical energy whose purpose is to return to equilibrium, but, proceeding from the primary functions of discharge (principle of inertia) and accumulation (exigencies of life), to consolidate an asymmetry within the nervous system. This gives rise to a set of quasi-psychological dualisms: an energetic dualism between kinetic and tonic energy; a systemic dualism between impermeable and permeable neurons; and a processual dualism between courses of the excitation with and without the inhibiting influence of the ego.

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Deep eutectic solvents (DESs) have attracted significant attention in recent years due to its environment friendly characteristics and its participation in the multi-heteroatom doping of carbon quantum dots (CQDs). In this work, we present a simple, fast, and environment-friendly microwave synthesis approach for the synthesis of DES-assisted nitrogen and chloride co-doped CQDs (N,Cl-CQDs) using a choline chloride-urea based DES. A biomass-based precursor, i.

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A soda lime glass substrate is used for fabricating CuZnSnS (CZTS) thin films using copper (II) sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) targets using an advanced co-sputtering deposition process. Following that, the films are annealed at 470 °C without sulfur (S). An algorithm based on the deposition rate of the previously specified targets set the co-sputtering condition, which maintains a deposition pressure of 5, 10, 15, and 20 mTorr.

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The intrinsic spontaneous and piezoelectric polarizations of GaN lead to the formation of triangular wells and barriers, resulting in the manifestation of chaotic transport models in GaN quantum well intersubband transition (ISBT) infrared detectors and giving rise to various adverse effects. The APSYS software was utilized to construct a novel GaN quantum well ISBT infrared detector in this study. By endeavoring to modify the quantum well structure, our objective was to precisely adjust the energy level of the first excited state (E1) to align with the apex of the triangular barrier.

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Investigations of modulation method and stress mechanism for the growth of AlGaN channel heterostructures.

Nanotechnology

January 2025

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, People's Republic of China.

In this work, the strong connection between the channel and the barrier layer of AlGaN channel heterostructures has been investigated in detail. Unlike GaN as a channel material, AlGaN channel layers significantly influence the transport characteristics and quality of AlGaN barrier layers with increasing Al composition. Furthermore, the stress mechanism in the growth of the AlGaN layer has been thoroughly discussed.

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