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Correlation versus hybridization gap in CaMn[Formula: see text]Bi[Formula: see text].
Sci Rep
June 2023
Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545 USA.
We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn[Formula: see text]Bi[Formula: see text], a candidate hybridization-gap semiconductor. By employing a DFT+U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations.
View Article and Find Full Text PDFObservation of negative terahertz photoconductivity in strongly correlated electron-doped CaMnOthin film.
J Phys Condens Matter
April 2023
Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India.
Electron-doped CaCeMnO(CCMO) possesses a unique band structure and exhibits a giant topological Hall effect contrary to other correlation-driven manganites known for insulator-to-metal transition, magnetoresistance, complex magnetic order, etc. The interaction mechanisms among the fundamental entities and their dynamical evolutions responsible for this unusual topological phase are yet to be understood. Here, we employ time-averaged and sub-picosecond time-resolved terahertz (THz) spectroscopy to explore the low-energy steady-state and ultrafast carrier dynamics, respectively, to unravel the complexity of charge carriers during their transition from a non-equilibrium state to the ground state in CCMO thin film.
View Article and Find Full Text PDFFeO represents an important end-member for planetary interiors mineralogy. However, its properties in the liquid state under high pressure are poorly constrained. Here, in situ high-pressure and high-temperature X-ray diffraction experiments, ab initio simulations, and thermodynamic calculations are combined to study the local structure and density evolution of liquid FeO under extreme conditions.
View Article and Find Full Text PDFOvercoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide.
Nat Commun
March 2019
INFN and Department of Physics, University of Rome La Sapienza, P.Le A. Moro 2, 00185, Rome, Italy.
The complex interplay among electronic, magnetic and lattice degrees of freedom in Mott-Hubbard materials leads to different types of insulator-to-metal transitions (IMT) which can be triggered by temperature, pressure, light irradiation and electric field. However, several questions remain open concerning the quantum or thermal nature of electric field-driven transition process. Here, using intense terahertz pulses, we reveal the emergence of an instantaneous purely-electronic IMT in the Mott-Hubbard vanadium sequioxide (VO) prototype material.
View Article and Find Full Text PDFThermoelectricity in correlated narrow-gap semiconductors.
J Phys Condens Matter
May 2018
Institute of Solid State Physics, TU Wien, A-1040 Vienna, Austria.
We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class-such as FeSi and FeSb-display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility.
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