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Comprehensive Structural, Chemical, and Optical Characterization of CuZnSnS Films on Kapton Using the Automated Successive Ionic Layer Adsorption and Reaction Method.
Nanomaterials (Basel)
January 2025
Tecnológico Nacional de México Campus Tuxtla, Carretera Panamericana Km 1080, Tuxtla Gutiérrez C.P. 29050, Mexico.
This study provides a comprehensive structural, chemical, and optical characterization of CZTS thin films deposited on flexible Kapton substrates via the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The investigation explored the effects of varying deposition cycles (40, 60, 70, and 80) and annealing treatments on the films. An X-ray diffraction (XRD) analysis demonstrated enhanced crystallinity and phase purity, particularly in films deposited with 70 cycles.
View Article and Find Full Text PDFProbing and manipulating the Mexican hat-shaped valence band of InSe.
Nat Commun
January 2025
School of Physics and Astronomy, University of Nottingham, Nottingham, UK.
Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. However, many theoretical predictions of their electronic properties have yet to be confirmed experimentally and exploited. Here, we use nanoscale angle-resolved photoemission electron spectroscopy and optical transmission in high magnetic fields to reveal the electronic band structure of the van der Waals ferroelectric indium selenide (α-InSe).
View Article and Find Full Text PDFEffect of Alloying Metal Elements on the Valence Band of β-GaO: A First-Principles Study.
J Phys Chem Lett
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Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction.
View Article and Find Full Text PDFElectronic properties, optical transparency and transport properties of the p-type transparent conductive oxide family SnPbNbO ( = 0, 0.5, 1.0, 1.5, and 2.0): a density functional theory study.
Phys Chem Chem Phys
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Bond and Band Engineering Group, School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
Based on density functional theory, we introduce a novel family of p-type transparent conductive oxides, SnPbNbO ( = 0, 0.5, 1.0, 1.
View Article and Find Full Text PDFLigand-Directed Valence Band Engineering in Pb Hybrid Crystals: Achieving Dispersive Bands and Shallow Valence Band Maximum.
J Am Chem Soc
December 2024
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
While crystalline hybrid solids hold great potential as novel semiconductors, most semiconductive hybrids utilize transition metal ions, which inherently limit carrier mobility due to the small band dispersion derived from the d orbitals. The filled s orbitals of post-transition metal ions offer the potential to design dispersed valence bands, but a method to translate the local structure design of these metal ions to valence band engineering is still in development. This study focuses on Pb-containing hybrid crystals, developing a simple strategy to control the Pb coordination geometry through the molecular design of azole ligands.
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