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Controlled Oxidation of Metallic Molybdenum Patterns via Joule Heating for Localized MoS Growth.
Nanomaterials (Basel)
January 2025
Department of Physics and Astronomy Athens, Ohio University, Athens, OH 45701, USA.
High-quality two-dimensional transition metal dichalcogenides (2D TMDs), such as molybdenum disulfide (MoS), have significant potential for advanced electrical and optoelectronic applications. This study introduces a novel approach to control the localized growth of MoS through the selective oxidation of bulk molybdenum patterns using Joule heating, followed by sulfurization. By passing an electric current through molybdenum patterns under ambient conditions, localized heating induced the formation of a molybdenum oxide layer, primarily MoO and MoO, depending on the applied power and heating duration.
View Article and Find Full Text PDFCO Plasma Treatment To Prepare the Rear Emitter with a Boron-Doped Hydrogenated Amorphous/Nanocrystalline Silicon Stack for a High-Efficiency Silicon Heterojunction Solar Cell.
ACS Appl Mater Interfaces
January 2025
Anhui Huasun Energy Company, Limited, Xuancheng 242000, China.
A rear emitter with a p-type boron-doped hydrogenated amorphous silicon/nanocrystalline silicon [a-Si:H(p)/nc-Si:H(p)] stack was prepared for the silicon heterojunction (SHJ) solar cell to improve its short-circuit current density (). CO plasma treatment (CO PT) was applied to a-Si:H(p) to facilitate the crystallization of the subsequently deposited nc-Si:H(p). To evaluate the effect of the CO PT, two different nc-Si:H(p) layers with low and high crystallinity (χ) were investigated.
View Article and Find Full Text PDFBuffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFStretchable Primary-Blue Color-Conversion Layer: Crystallization of Phase-Engineered Perovskite Nanocrystals in an Organic Matrix.
ACS Nano
January 2025
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Although the use of ultraviolet (UV) light-emitting diode backlight with red, green, and blue color-conversion layers (CCLs) in displays simplifies the manufacturing process and improves display uniformity, research on blue CCLs remains limited and has been mostly reported in the sky-blue region (> 470 nm), which is insufficient to satisfy the Rec. 2020 color standard. As halide perovskites offer a high extinction coefficient, color purity, and photoluminescence quantum yield (PLQY), they become highly competitive color-converting materials for CCLs.
View Article and Find Full Text PDFPatterning Planar, Flexible Li-S Battery Full Cells on Laser-Induced Graphene Traces.
Nanomaterials (Basel)
December 2024
Quantum Nano Centre, Department of Chemical Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada.
Laser conversion of commercial polymers to laser-induced graphene (LIG) using inexpensive and accessible CO lasers has enabled the rapid prototyping of promising electronic and electrochemical devices. Frequently used to pattern interdigitated supercapacitors, few approaches have been developed to pattern batteries-in particular, full cells. Herein, we report an LIG-based approach to a planar, interdigitated Li-S battery.
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