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Magnetically Diluted Dy and Yb Squarates Showing Relaxation Tuning and Matrix Dependence.
Molecules
January 2025
Department of Engineering Science, The University of Electro-Communications, Chofu 182-8585, Tokyo, Japan.
A new compound [Y(sq)(HO)] (Y-sq; sq = squarate (CO)) was prepared and structurally characterized. Since the RE-sq family (RE = Y, Dy, Yb, Lu) gave isostructural crystals, the objective of this study is to explore the effects of diamagnetic dilution on the SIM behavior through systematic investigation and comparison of diamagnetically diluted and undiluted forms. The 1%-Diluted Dy compounds, Dy@Y-sq and Dy@Lu-sq, showed AC magnetic susceptibility peaks without any DC bias field (), whereas undiluted Dy-sq showed no AC out-of-phase response under the same conditions.
View Article and Find Full Text PDFPerformance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction.
Micromachines (Basel)
December 2024
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ.
View Article and Find Full Text PDFThermoelectric properties of a quantum dot attached to normal metal and topological superconductor.
Sci Rep
January 2025
Aix Marseille Univ, Université de Toulon, CNRS, CPT, Marseille, France.
The thermoelectric properties of hybrid systems based on a single-level quantum dot coupled to a normal-metal/half-metallic lead and attached to a topological superconductor wire are investigated. The topological superconductor wire is modeled by a spinless p-wave superconductor which hosts both a Majorana bound state at its extremity and above gap quasiparticle excitations. The main interest of our investigation is to study the interplay of sub-gap and single-particle tunneling processes and their contributions to the thermoelectric response of the considered system.
View Article and Find Full Text PDFPhotoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities.
Nanomaterials (Basel)
January 2025
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.
We compare the optical properties of four diode samples differing by built-in field direction and width of the InGaN quantum well in the active layer: two diodes with standard layer sequences and 2.6 and 15 nm well widths and two diodes with inverted layer ordering (due to the tunnel junction grown before the structure) also with 2.6 and 15 nm widths.
View Article and Find Full Text PDFIn Situ, Treatment with Guanidinium Chloride Ligand Enables Efficient Blue Quantum Dot Light-Emitting Diodes with 23.5% External Quantum Efficiency.
Adv Mater
January 2025
National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Lab for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, 475004, China.
The poor efficiency and stability of blue Quantum Dot Light-Emitting diodes (QLED) hinders the practical applications of QLEDs full-color displays. Excessive electron injection, insufficient hole injection, and abundant defects on the surface of quantum dots (QD) are the main issues limiting the performance of blue devices. Herein, an in situ treatment with bipolar small molecule polydentate ligand-guanidine chloride (GACl) is proposed to simultaneously suppress excessive electron injection, patch surface defects of QDs and enhance hole injection.
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