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Perturbing Pentalene: Aromaticity and Antiaromaticity in a Non-alternant Polycyclic Aromatic Hydrocarbon and BN-heteroanalogues.
Chemphyschem
January 2025
The University of Sheffield, school of mathematical and physical sciences, UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND.
Pentalene (C8H6) and NN- and BB-bridged heterocyclic analogues (BN)4H6, derived by replacement of CC pairs with BN, are taken as paradigms for tuning of ring-current (anti)aromaticity by variation of π charge, electronegativity and substitution pattern. Ab initio calculation of maps for the π current density induced in these model systems by a perpendicular external magnetic field exhibits the full range of tropicity, from diatropic aromatic to nonaromatic to paratropic antiaromatic, with a ready rationalisation in terms of an orbital model. Further calculations on systems of varying charge in which these motifs are embedded in extended PAH systems with naphthalene and phenanthrene 'clamps' show promise for switching between current patterns and related opto-electronic properties.
View Article and Find Full Text PDFNovel Magnetic-Field-Free Switching Behavior in vdW-Magnet/Oxide Heterostructure.
Adv Mater
January 2025
Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide FeGeTe/SrTiO heterostructure.
View Article and Find Full Text PDFControllable -Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling.
Nano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
View Article and Find Full Text PDFSpin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled FeGaTe/CrSBr Magnetic van der Waals Heterostructure.
ACS Nano
January 2025
Center of Free Electron Laser & High Magnetic Field, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D FeGaTe (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K.
View Article and Find Full Text PDFTuning anomalous Hall conductivity antiferromagnetic configurations in GdPtBi.
Phys Chem Chem Phys
January 2025
Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha No 10, Bandung 40132, Jawa Barat, Indonesia.
The magnetic, electronic, and topological properties of GdPtBi were systematically investigated using first-principles density functional theory (DFT) calculations. Various magnetic configurations were examined, including ferromagnetic (FM) and antiferromagnetic (AFM) states, with particular focus on AFM states where the Gd magnetic moments align either parallel (AFM) or perpendicular (AFM) to the [111] crystal direction. For AFM, the in-plane angles were varied at = 0°, 15°, and 30° (denoted as AFM, AFM, and AFM, respectively).
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