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Influence of Nanosize Hole Defects and their Geometric Arrangements on the Superfluid Density in Atomically Thin Single Crystals of Indium Superconductor.
Phys Rev Lett
September 2021
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA.
Using Indium sqrt[7]×sqrt[3] on Si(111) as an atomically thin superconductor platform, and by systematically controlling the density of nanohole defects (nanometer size voids), we reveal the impacts of defect density and defect geometric arrangements on superconductivity at macroscopic and microscopic length scales. When nanohole defects are uniformly dispersed in the atomic layer, the superfluid density monotonically decreases as a function of defect density (from 0.7% to 5% of the surface area) with minor change in the transition temperature T_{C}, measured both microscopically and macroscopically.
View Article and Find Full Text PDFSingle-Layer Limit of Metallic Indium Overlayers on Si(111).
Phys Rev Lett
September 2016
Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea.
Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one sqrt[7]×sqrt[3] phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other sqrt[7]×sqrt[7] phase with 1.
View Article and Find Full Text PDFMetallic transport in a monatomic layer of in on a silicon surface.
Phys Rev Lett
March 2011
Department of Physics, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures.
View Article and Find Full Text PDFRole of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111).
Phys Rev Lett
December 2000
Department of Physics, Iowa State University, Ames, Iowa and and Ames Laboratory, U.S.-DOE, Ames, Iowa 50011, USA.
Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film.
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