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Cryogenic in-memory computing using magnetic topological insulators.
Nat Mater
January 2025
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China.
Machine learning algorithms have proven to be effective for essential quantum computation tasks such as quantum error correction and quantum control. Efficient hardware implementation of these algorithms at cryogenic temperatures is essential. Here we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a cryogenic in-memory computing scheme based on the coexistence of a chiral edge state and a topological surface state.
View Article and Find Full Text PDFBulk thermally conductive polyethylene as a thermal interface material.
Mater Horiz
January 2025
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, USA.
As the demand for high-power-density microelectronics rises, overheating becomes the bottleneck that limits device performance. In particular, the heterogeneous integration architecture can magnify the importance of heat dissipation and necessitate electrical insulation between critical junctions to prevent dielectric breakdown. Consequently, there is an urgent need for thermal interface materials (TIMs) with high thermal conductivity and electrical insulation to address this challenge.
View Article and Find Full Text PDFQuantum anomalous Hall effect in a nonmagnetic bismuth monolayer with a high Chern number.
Mater Horiz
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
The quantum anomalous Hall effect (QAHE) with a high Chern number hosts multiple dissipationless chiral edge channels, which is of fundamental interest and promising for applications in spintronics. However, QAHE is currently limited in two-dimensional (2D) ferromagnets with Chern number . Using a tight-binding model, we put forward that Floquet engineering offers a strategy to achieve QAHE in 2D nonmagnets, and, in contrast to generally reported QAHE in 2D ferromagnets, a high-Chern-number is obtained accompanied by the emergence of two chiral edge states.
View Article and Find Full Text PDFQuantum materials governed by emergent topological fermions have become a cornerstone of physics. Dirac fermions in graphene form the basis for moiré quantum matter and Dirac fermions in magnetic topological insulators enabled the discovery of the quantum anomalous Hall (QAH) effect. By contrast, there are few materials whose electromagnetic response is dominated by emergent Weyl fermions.
View Article and Find Full Text PDFDirect observation of chiral edge current at zero magnetic field in a magnetic topological insulator.
Nat Commun
January 2025
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. The van der Waals antiferromagnet MnBiTe is theorized to be a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution.
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