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Sulfur isotope engineering in heterostructures of transition metal dichalcogenides.
Nanoscale Adv
January 2025
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University Ke Karlovu 5, 12116, Prague 2 Czech Republic
Heterostructuring of two-dimensional materials offers a robust platform to precisely tune optoelectronic properties through interlayer interactions. Here we achieved a strong interlayer coupling in a double-layered heterostructure of sulfur isotope-modified adjacent MoS monolayers two-step chemical vapor deposition growth. The strong interlayer coupling in the MoS(S)/MoS(S) was affirmed by low-frequency shear and breathing modes in the Raman spectra.
View Article and Find Full Text PDFThiophene Copolymer Donors Containing Ester-Substituted Thiazole for Organic Solar Cells.
ACS Appl Mater Interfaces
January 2025
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
Organic solar cells have seen significant progress in the past 2 decades with power conversion efficiencies (PCEs) exceeding 20% but mostly based on high-cost photovoltaic materials. Polythiophenes (PTs) without a fused-ring structure are good candidates as low-cost donor materials, deserving more attention for studying. In this work, ester-substituted thiazole (E-Tz) was explored as the electron-withdrawing unit to design PTs, and further optimization on the fluorinated/nonfluorinated donor segment contents via copolymerization strategy was simultaneously performed, yielding polymer donors of PTETz-100F, PTETz-80F, and PTETz-0F.
View Article and Find Full Text PDFPhonon Involved Photoluminescence of Mn Ions Doped CsPbCl Micro-Size Perovskite Assembled Crystals.
Adv Sci (Weinh)
January 2025
State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China.
Mn ions doped CsPbCl perovskite nanocrystals (NCs) exhibit superiority of spin-associated optical and electrical properties. However, precisely controlling the doping concentration, doping location, and the mono-distribution of Mn ions in the large-micro-size CsPbCl perovskite host is a formidable challenge. Here, the micro size CsPbCl perovskite crystals (MCs) are reported with uniform Mn ions doping by self-assembly of Mn ions doped CsPbCl perovskite NCs.
View Article and Find Full Text PDFSymmetry-Breaking Charge-Separation in a Subphthalocyanine Dimer Resolved by Two-Dimensional Electronic Spectroscopy.
J Phys Chem C Nanomater Interfaces
January 2025
School of Chemistry, University of East Anglia, Norwich NR4 7TJ, U.K.
Understanding the role of structural and environmental dynamics in the excited state properties of strongly coupled chromophores is of paramount importance in molecular photonics. Ultrafast, coherent, and multidimensional spectroscopies have been utilized to investigate such dynamics in the simplest model system, the molecular dimer. Here, we present a half-broadband two-dimensional electronic spectroscopy (HB2DES) study of the previously reported ultrafast symmetry-breaking charge separation (SB-CS) in the subphthalocyanine oxo-bridged homodimer μ-OSubPc.
View Article and Find Full Text PDF2D metallic transition metal dichalcogenides: promising contact metals for 2D GaN-based (opto)electronic devices.
Phys Chem Chem Phys
January 2025
Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices, Jiangxi Science & Technology Normal University, Nanchang 330018, China.
Owing to their high light absorption coefficient, excellent electronic mobility, and enhanced excitonic effect, two-dimensional (2D) GaN materials hold great potential for applications in optoelectronic and electronic devices. As the metal-semiconductor junction (MSJ) is a fundamental component of semiconductor-based devices, identifying a suitable metal for contacting semiconductors is essential. In this work, detailed first-principles calculations were performed to investigate the contact behavior between the GaN monolayer (ML) and a series of 2D metals MX (M = Nb, Ta, V, Mo, or W; X = S or Se).
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