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The Impact of Carbon on Electronic Structure of N-Doped ZnO Films: Scanning Photoelectron Microscopy Study and DFT Calculations.
Nanomaterials (Basel)
December 2024
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland.
A Scanning Photoelectron Microscopy (SPEM) experiment has been applied to ZnO:N films deposited by Atomic Layer Deposition (ALD) under O-rich conditions and post-growth annealed in oxygen at 800 °C. spatial resolution (130 nm) allows for probing the electronic structure of single column of growth. The samples were cleaved under ultra-high vacuum (UHV) conditions to open atomically clean cross-sectional areas for SPEM experiment.
View Article and Find Full Text PDFLayered double hydroxide modified bismuth vanadate as an efficient photoanode for enhancing photoelectrochemical water splitting.
Mater Horiz
January 2025
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Aichi, Japan.
Photoelectrochemical (PEC) water splitting has attracted significant interest as a promising approach for producing clean and sustainable hydrogen fuel. An efficient photoanode is critical for enhancing PEC water splitting. Bismuth vanadate (BiVO) is a widely recognized photoanode for PEC applications due to its visible light absorption, suitable valence band position for water oxidation, and outstanding potential for modifications.
View Article and Find Full Text PDFEffect of Alloying Metal Elements on the Valence Band of β-GaO: A First-Principles Study.
J Phys Chem Lett
January 2025
Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction.
View Article and Find Full Text PDFNumerical Investigation and Device Architecture Optimization of SbSe Thin-Film Solar Cells Using SCAPS-1D.
Materials (Basel)
December 2024
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan.
Antimony selenide (SbSe) shows promise for photovoltaics due to its favorable properties and low toxicity. However, current SbSe solar cells exhibit efficiencies significantly below their theoretical limits, primarily due to interface recombination and non-optimal device architectures. This study presents a comprehensive numerical investigation of SbSe thin-film solar cells using SCAPS-1D simulation software, focusing on device architecture optimization and interface engineering.
View Article and Find Full Text PDFA novel electrochemical sensor for the determination of cadmium ions based on nitrogen-enriched carbon modified electrode.
Sci Rep
January 2025
Department of Nanotechnology, Faculty of Chemistry, Urmia University, Urmia, Iran.
In the present work, nitrogen-doped carbon was synthesized starting from a chitosan/urea mixture and immobilized at the surface of a bare glassy carbon electrode to detect Cd(II) ions using differential pulse-anodic stripping voltammetry method (DP-ASV). The synthesized nitrogen-doped carbon showed a significant potential for determining Cd(II) ions. Doping carbon with nitrogen atoms gives a structure with increased valence band energy, leading to acceleration of the electron transfer by creating an interaction of nitrogen's free electrons with Cd(II), which subsequently increases the peak current value.
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