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Morphology control and enhanced activity of (Cu-S)MOF@ZnS heterostructures for photocatalytic H production.
J Colloid Interface Sci
December 2024
Department of Chemistry, Fu Jen Catholic University, New Taipei City 24205, Taiwan.
A novel metal-organic framework (MOF), (Cu-S)MOF, with a copper-sulfur planar structure was applied to photocatalytic H production application. (Cu-S)MOF@ZnS nanocomposite was synthesized using a microwave-assisted hydrothermal approach. The formation of (Cu-S)MOF and wurtzite ZnS in the composite nanoparticles was analyzed by X-ray diffraction (XRD), field emission-scanning electron microscopy (FESEM), and high-resolution transmission electron microscope (HRTEM).
View Article and Find Full Text PDFVisualization and Estimation of 0D to 1D Nanostructure Size by Photoluminescence.
Nanomaterials (Basel)
December 2024
Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Saulėtekio Ave. 3, 10257 Vilnius, Lithuania.
We elaborate a method for determining the 0D-1D nanostructure size by photoluminescence (PL) emission spectrum dependence on the nanostructure dimensions. As observed, the high number of diamond-like carbon nanocones shows a strongly blue-shifted PL spectrum compared to the bulk material, allowing for the calculation of their top dimensions of 2.0 nm.
View Article and Find Full Text PDFDirect Evidence of Excessive Charge-Carrier-Induced Degradation in InP Quantum-Dot Light-Emitting Diodes.
ACS Appl Mater Interfaces
December 2024
Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
The limited operational lifetime of quantum-dot light-emitting diodes (QLEDs) poses a critical obstacle that must be addressed before their practical application. Specifically, cadmium-free InP-based QLEDs, which are environmentally benign, experience significant operational degradation due to challenges in charge-carrier confinement stemming from the composition of InP quantum dots (QDs). This study investigates the operational degradation of InP QLEDs and provides direct evidence of the degradation process.
View Article and Find Full Text PDFDoublet Spin State Mediated Photoluminescence Upconversion in Organic Radical Donor-Triplet Acceptor Dyads.
J Am Chem Soc
December 2024
Department of Chemistry, University of Illinois Chicago, Chicago, Illinois 60607, United States.
Donor-acceptor dyads are promising materials for improving triplet-sensitized photon upconversion due to faster intramolecular energy transfer (ET), which unfortunately competes with charge transfer (CT) dynamics. To circumvent the issue associated with CT, we propose a novel purely organic donor-acceptor dyad, where the CT character is confined within the donor moiety. In this work, we report the synthesis and characterization of a stable organic radical donor-triplet acceptor dyad () consisting of the acceptor perylene () linked to the donor (4--carbazolyl-2,6-dichlorophenyl)-bis(2,4,6-trichlorophenyl)methyl radical ().
View Article and Find Full Text PDFGaAs Solar Cells Grown Directly on V-Groove Si Substrates.
ACS Appl Mater Interfaces
December 2024
National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
The direct epitaxial growth of high-quality III-V semiconductors on Si is a challenging materials science problem with a number of applications in optoelectronic devices, such as solar cells and on-chip lasers. We report the reduction of dislocation density in GaAs solar cells grown directly on nanopatterned V-groove Si substrates by metal-organic vapor-phase epitaxy. Starting from a template of GaP on V-groove Si, we achieved a low threading dislocation density (TDD) of 3 × 10 cm in the GaAs by performing thermal cycle annealing of the GaAs followed by growth of InGaAs dislocation filter layers.
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