Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/physrevb.48.5457 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Preparation, Crystal Structure, and Properties of the Kagome Metal ThVSn.
Inorg Chem
December 2024
School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
Kagome lattice materials are anticipated to exhibit unique properties stemming from the intricate interplay among geometry, magnetism, electronic correlation, and band topology. Here, we report a new ternary compound, ThVSn, which contains double-layer kagome networks composed of vanadium atoms. The compound crystallizes in an HfFeGe-type structure with cell parameters of = = 5.
View Article and Find Full Text PDFTransport phase diagram and anomalous metallicity in superconducting infinite-layer nickelates.
Nat Commun
November 2024
High Field Magnet Laboratory (HFML-FELIX) and Institute for Molecules and Materials, Radboud University, Toernooiveld 7, 6525 ED, Nijmegen, Netherlands.
Article Synopsis
- The study investigates whether high-T cuprates and infinite-layer nickelates share similar interactions affecting their normal and superconducting states, highlighting recent advancements in high-quality nickelate crystals.
- Recent research shows that nickelates have a superconducting dome and comparable transport properties to cuprates, but the normal state behavior in strong magnetic fields needs further exploration.
- Findings from new NdSrNiO films indicate that the normal-state resistivity in infinite-layer nickelates displays non-Fermi-liquid behavior across various doping levels, suggesting both systems share characteristics of a quantum critical phase despite differences in their charge dynamics.
Universal correlation between H-linear magnetoresistance and T-linear resistivity in high-temperature superconductors.
Nat Commun
September 2024
H. H. Wills Physics Laboratory, University of Bristol, Bristol, UK.
The signature feature of the 'strange metal' state of high-T cuprates-its linear-in-temperature resistivity-has a coefficient α that correlates with T, as expected were α derived from scattering off the same bosonic fluctuations that mediate pairing. Recently, an anomalous linear-in-field magnetoresistance (=γH) has also been observed, but only over a narrow doping range, leaving its relation to the strange metal state and to the superconductivity unclear. Here, we report in-plane magnetoresistance measurements on three hole-doped cuprate families spanning a wide range of temperatures, magnetic field strengths and doping.
View Article and Find Full Text PDFObservation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures.
ACS Appl Mater Interfaces
August 2024
School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region.
View Article and Find Full Text PDFObservation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-AgTe.
Nat Commun
February 2024
Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China.
Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 μΩ⋅cm) at room temperature under 9 T in β-AgTe crystals grown by chemical vapor deposition.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!