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Power-dependent and ultrafast spectroscopic studies of Ag ion-doped colloidal CdSe nanoplatelets.
Phys Chem Chem Phys
January 2025
School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032, India.
Atomically precise two-dimensional (2D) semiconductor nanoplatelets (NPLs) are found to be promising materials for next-generation optoelectronic devices due to their excellent optical properties. However, energy loss through phonon emission significantly causes problems in achieving efficient performance. Power-dependent steady-state spectroscopy and ultrafast spectroscopic studies have been performed to understand the influence of Ag ions on ultrafast carrier dynamics and thermalization processes in colloidal CdSe NPLs.
View Article and Find Full Text PDFBy employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 µm- and 8.3 µm-emitting QCLs.
View Article and Find Full Text PDFTuning electronic and optical properties of low-dimensional quantum systems in a flexible way is of particular importance in designing semiconductor-based devices. Semiconductor quantum rings (QRs) are nanoscopic structures that have become promising systems for physical and technological applications due to their unique electronic and optical properties. Here, we explore the fundamental electronic and optical properties of laterally-coupled QRs by taking into account the combined effects of applied magnetic and non-resonant terahertz intense laser fields.
View Article and Find Full Text PDFIntraband transitions at a CsPbBr/GaAs heterointerface in a two-step photon upconversion solar cell.
Sci Rep
November 2024
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe, 657-8501, Japan.
Two-step photon upconversion solar cells (TPU-SCs) based on III-V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III-V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr/GaAs heterointerface.
View Article and Find Full Text PDFExtending the defect tolerance of halide perovskite nanocrystals to hot carrier cooling dynamics.
Nat Commun
September 2024
Inorganic Chemistry Laboratory, University of Oxford, Oxford, UK.
Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how intentionally-introduced traps affect hot carrier relaxation in CsPbX nanocrystals (X = Br, I, or mixture). Using femtosecond interband and intraband spectroscopy, along with energy-dependent photoluminescence measurements and kinetic modelling, it is found that hot carriers are not universally defect tolerant in CsPbX, but are strongly correlated to the defect tolerance of cold carriers, requiring shallow traps to be present (as in CsPbI).
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