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Relaxation Channels of Two Types of Hot Carriers in Gold Nanostructures.
Nano Lett
December 2024
State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China.
Article Synopsis
- Understanding hot carrier relaxation in metal nanostructures is crucial for their use in energy conversion and photocatalysis.
- Research shows two distinct relaxation channels for hot carriers in gold plasmonic nanostructures, with faster relaxation from surface plasmon resonance (SPR) compared to interband transitions (IBTs).
- The findings highlight different scattering mechanisms for hot carriers, with surface-mediated scattering occurring in large structures from SPR and bulk scattering for IBT-induced carriers, enhancing our grasp of hot carrier dynamics.
Carrier type and density dependence of impact ionization characteristics in WSe.
Nanoscale
October 2024
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea.
The impact ionization process offers advantages in achieving low-power and high-speed switching in transistors and also provides high internal gain for photodetectors. We investigate the density dependence of both electron- and hole-initiated impact ionization in WSe. We observe a record-low critical electric field for impact ionization and a large multiplication factor in WSe when the impact ionization is initiated by holes, particularly near a charge-neutral point.
View Article and Find Full Text PDFLattice thermal conductivity of topological insulator BiSe nanocrystals: comparison from theoretical and experimental.
Phys Chem Chem Phys
May 2023
Department of Physics, Nanoscale Physics Laboratory, Indian Institute of Technology Madras, Chennai 600036, India.
Lattice thermal conductivity () calculations using the Wiedemann-Franz law involve electrical conductivity, which introduces an error in the actual value of . We have adopted a non-contact measurement technique and calculated the from the temperature and power-dependent Raman spectra of the BiSe nanocrystals with truncated hexagon plate morphology stabilized in a hexagonal crystal structure. The hexagon plates of BiSe are 37 to 55 nm thick with lateral dimensions around 550 nm.
View Article and Find Full Text PDFHot Carrier Cooling and Trapping in Atomically Thin WS Probed by Three-Pulse Femtosecond Spectroscopy.
ACS Nano
April 2023
Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom.
Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications.
View Article and Find Full Text PDFOn the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides.
J Phys Condens Matter
May 2022
Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof 5, 35032 Marburg, Germany.
Anbased fully microscopic many-body approach is used to study the carrier relaxation dynamics in monolayer transition-metal dichalcogenides. Bandstructures and wavefunctions as well as phonon energies and coupling matrix elements are calculated using density functional theory. The resulting dipole and Coulomb matrix elements are implemented in the Dirac-Bloch equations to calculate carrier-carrier and carrier-phonon scatterings throughout the whole Brillouin zone (BZ).
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