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Novel Au/CuNiSnS Nano-Heterostructure: Synthesis, Structure, Heterojunction Band Offset and Alignment, and Interfacial Charge Transfer Dynamics.
ACS Appl Mater Interfaces
May 2024
Department of Energy and Mineral Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Considering the importance of physics and chemistry at material interfaces, we have explored the coupling of multinary chalcogenide semiconductor CuNiSnS nanoparticles (CNTS NPs) for the first time with the noble metal (Au) to form Au-CNTS nano-heterostructures (NHSs). The Au-CNTS NHSs is synthesized by a simple facile hot injection method. Synergistic experimental and theoretical approaches are employed to characterize the structural, optical, and electrical properties of the Au-CNTS NHSs.
View Article and Find Full Text PDFRevealing the reason for enhanced CZTSSe device performance after Ag heavily doped into absorber surface.
J Chem Phys
March 2024
Tianjin Key Laboratory of Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China.
Ag-doping treatment is a popular method for enhancing the performance of kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Among the various methods, incorporating a high concentration of Ag+ into an absorber surface has proven to be particularly effective. However, the exact mechanisms behind this improvement are still unclear.
View Article and Find Full Text PDFMechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation.
ACS Omega
February 2024
Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang 330038, China.
In the InGaN multiple quantum wells (MQWs), V-shaped pits play a crucial role in carrier transport, which directly affects emitting efficiency. First-principles calculations are applied to investigate the formation of the V-shaped pits, and the results indicate that they are inclined to form in the N-rich environment. Meanwhile, we calculate the interfacial electronic properties of the sidewalls of the V-shaped pits with varying indium (In) and magnesium (Mg) compositions.
View Article and Find Full Text PDFPulse electrodeposition of CuSbS thin films: Role of Cu/Sb precursor ratio on the phase formation and its performance as photocathode for hydrogen evolution.
Heliyon
February 2024
Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580, Mexico.
In this paper, we outline the development of stoichiometric chalcostibite, CuSbS thin films, from a single bath by pulse electrodeposition for its application as a photocathode in photoelectrochemical cells (PEC). The Cu/Sb precursor molar ratio of the deposition bath was varied to obtain stoichiometric CuSbS thin films. The optimized deposition and dissolution potentials were -0.
View Article and Find Full Text PDFEffects of the Electrical Properties of SnO and C60 on the Carrier Transport Characteristics of p-i-n-Structured Semitransparent Perovskite Solar Cells.
Nanomaterials (Basel)
December 2023
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, Republic of Korea.
Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO has been widely used as a buffer layer in the top cells because it enables conformal, pinhole-free, and highly transparent buffer layer formation. In this work, the effects of various electrical properties of SnO and C60 layers on the carrier transport characteristics and the performance of the final devices were investigated using a numerical simulation method, which was established based on real experimental data to increase the validity of the model.
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