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Direct Observation of Substantial Phonon Nonequilibrium Near Nanoscale Hotspots in Gallium Nitride.
Adv Sci (Weinh)
January 2025
School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei, 430072, P. R. China.
Phonon modal nonequilibrium is believed to widely exist around nanoscale hotspots, which can significantly affect the performance of nano-electronic and optoelectronic devices. However, such a phenomenon has not been explicitly observed in 3D device semiconductors at the nanoscale. Here, by employing a tip-enhanced Raman thermal measurement approach, substantial phonon nonequilibrium in gallium nitride near sub-10 nm laser-excited hotspots is directly revealed for the first time.
View Article and Find Full Text PDFAnisotropic Elasticity, Spin-Orbit Coupling, and Topological Properties of ZrTe and NiTe: A Comparative Study for Spintronic and Nanoscale Applications.
Nanomaterials (Basel)
January 2025
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27606, USA.
The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological-elastic integration of ZrTe and NiTe. The anisotropy of Young's modulus, Poisson's ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe has higher mechanical property values and greater anisotropy than ZrTe.
View Article and Find Full Text PDFEffects of Homogeneous Doping on Electron-Phonon Coupling in SrTiO.
Nanomaterials (Basel)
January 2025
Department of Physics and Natural Science Research Institute, University of Seoul, Seoul 02504, Republic of Korea.
Bulk n-type SrTiO (STO) has long been known to possess a superconducting ground state at an exceptionally dilute carrier density. This has raised questions about the applicability of the BCS-Eliashberg paradigm with its underlying adiabatic assumption. However, recent experimental reports have set the pairing gap to the critical temperature (Tc) ratio at the BCS value for superconductivity in Nb-doped STO, even though the adiabaticity condition the BCS pairing requires is satisfied over the entire superconducting dome only by the lowest branch of optical phonons.
View Article and Find Full Text PDFRaman and Photoluminescence Studies of Quasiparticles in van der Waals Materials.
Nanomaterials (Basel)
January 2025
Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, China.
Two-dimensional (2D) layered materials have received much attention due to the unique properties stemming from their van der Waals (vdW) interactions, quantum confinement, and many-body interactions of quasi-particles, which drive their exotic optical and electronic properties, making them critical in many applications. Here, we review our past years' findings, focusing on many-body interactions in 2D layered materials, including phonon anharmonicity, electron-phonon coupling (), exciton dynamics, and phonon anisotropy based on temperature (polarization)-dependent Raman spectroscopy and Photoluminescence (PL). Our review sheds light on the role of quasi-particles in tuning the material properties, which could help optimize 2D materials for future applications in electronic and optoelectronic devices.
View Article and Find Full Text PDFEffects of Intrinsic Defects on the Carrier Lifetime in CdZnTe: Insights from Ab Initio Calculations.
J Phys Chem Lett
January 2025
School of Physics, Nankai University, Tianjin 300071, China.
CdZnTe (CZT) has garnered substantial attention due to its outstanding performance in room-temperature semiconductor radiation detectors, where carrier transport properties are critical for assessing the detector performance. However, due to the complexities of crystal growth, CZT is prone to defects that affect carrier lifetime and mobility. To investigate how defects affect nonequilibrium carrier transport, nonadiabatic molecular dynamics (NAMD) is employed to examine six types of intrinsic defects and their impact on electron-hole (e-h) recombination.
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