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Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors.
Materials (Basel)
November 2024
Busan Center, Korea Basic Science Institute, Busan 46742, Republic of Korea.
This study aims to develop a reference material that enables precise management of dopant distribution in power semiconductors. We thoroughly investigate the structural and surface properties of 4H-silicon carbide (4H-SiC) single crystals implanted without annealing using aluminum (Al) and phosphorus (P) ions. Ion-implanted 4H-SiC was thoroughly evaluated using advanced techniques, including X-ray diffraction (XRD), field emission transmission electron microscopy (FE-TEM), atomic force microscopy (AFM), time of flight medium energy ion scattering (ToF-MEIS), and secondary ion mass spectrometry (SIMS).
View Article and Find Full Text PDFElectronic excitation of transition metal nitrides by light ions with keV energies.
J Phys Condens Matter
June 2020
Department of Physics and Astronomy, Uppsala University, 751 20 Uppsala, Sweden.
We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.
View Article and Find Full Text PDFSynthesis and Growth Mechanism of Stable Prenucleated (≈0.8 nm Diameter) PbS Quantum Dots by Medium Energy Ion Scattering Spectroscopy.
Materials (Basel)
April 2019
Department of Energy Science and Engineering, DGIST, 333 Techno Jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu 42988, Korea.
In the current work, stable prenucleated PbS quantum dots (QDs) with a sub-nanometer (0.8 nm) size have been successfully synthesized via a systematically designed experiment. A detailed analysis of critical nucleation, growth, and stability for such ultrasmall prenucleated clusters is done.
View Article and Find Full Text PDFNon-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions.
ACS Appl Mater Interfaces
January 2016
Department of Chemistry & Biochemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403, United States.
A variety of metal oxide films (InGaOx, AlOx, "HafSOx") prepared from aqueous solutions were found to have non-uniform electron density profiles using X-ray reflectivity. The inhomogeneity in HafSOx films (Hf(OH)4-2x-2y(O2)x(SO4)y·zH2O), which are currently under investigation as inorganic resists, were studied in more detail by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and medium-energy ion scattering (MEIS). The HAADF-STEM images show a greater concentration of heavy atoms near the surface of a single-layer film.
View Article and Find Full Text PDFBrightness enhancement of plasma ion source by utilizing anode spot for nano applications.
Rev Sci Instrum
February 2012
Department of Nuclear Engineering, Seoul National University, Seoul 151-742, South Korea.
Anode spots are known as additional discharges on positively biased electrode immersed in plasmas. The anode spot plasma ion source (ASPIS) has been investigated as a high brightness ion source for nano applications such as focused ion beam (FIB) and nano medium energy ion scattering (nano-MEIS). The generation of anode spot is found to enhance brightness of ion beam since the anode spot increases plasma density near the extraction aperture.
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