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Optoelectronic Properties of Shallow Donor Atom in 2D-Curved Nanostructures Under External Electric and Magnetic Fields.
Nanomaterials (Basel)
December 2024
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050010, Colombia.
Using the effective mass approximation and the finite difference method, we examined the linear, non-linear, and total optical absorption coefficients (OAC), as well as the relative refractive index coefficients (RIC) variations for an off-center shallow donor impurity in a 2D-curved electronic nanostructure subjected to external electric and magnetic fields. Our results reveal that the peak positions of the OAC and RIC are susceptible to the geometrical angles, the impurity position, and the strength of the applied electric and magnetic fields. In particular, the positions of the OAC and RIC peaks can be shifted towards blue or red by adjusting the geometric angle.
View Article and Find Full Text PDFMagnetospectroscopy of shallow donors in two dimensions in the presence of fluctuations of the electrostatic potential.
Nanophotonics
April 2024
Faculty of Physics, University of Warsaw, ul. L. Pasteura 5, 02-093 Warsaw, Poland.
Article Synopsis
- The study investigates the spectroscopy of shallow donors in a CdTe/(Cd, Mg)Te structure, which helps test theoretical semiconductor models.
- Measurements were taken at low temperatures (4.2 K) and under strong magnetic fields, focusing on the photocurrent generated by far-infrared photons.
- The observed spectra show unexpected behaviors that don’t match traditional theories, leading to a new model that combines electrostatic fluctuations and magnetic field effects on electron localization.
Size-Dependent Isovalent Impurity Doping for Ambipolar Control in CuN.
J Am Chem Soc
September 2024
MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501, Japan.
Article Synopsis
- * An alternative method proposed involves using isovalent alkali metal impurities in Cu(I)-based semiconductors, where smaller impurities like Li enhance n-type conductivity, while larger ones like Cs and Rb improve p-type conductivity.
- * This approach, relying on the size of the impurities, leads to better control of electron and hole concentrations, potentially benefiting the development of advanced optoelectronic devices.
The role of native point defects and donor impurities in the electrical properties of ZnSbO: a hybrid density-functional study.
Phys Chem Chem Phys
July 2023
Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand.
The ceramic material zinc antimony oxide ZnSbO has promising electrical and magnetic properties, making it suitable for various applications such as electrochemical and energy storage. However, the effects of point defects and impurities on its electrical properties have never been revealed. Here, we employ hybrid density-functional calculations to investigate the energetics and electronic properties of native point defects and donor impurities in ZnSbO.
View Article and Find Full Text PDFTheoretical insights into the defect performance of the wide bandgap semiconductor BaS.
Phys Chem Chem Phys
April 2023
School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Wide bandgap semiconductors materials (WBGSMs) are of great interest for their applications in transparent electronics and power electronics. Recent studies have shown that BaS is a potential transparent conducting material but the knowledge of it is deficient. Herein, we systemically investigate its electronic structure and evaluate the effects of its intrinsic defects and extrinsic dopants by utilizing the hybrid density functional method.
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