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Nanoscale Mapping of Magnetic Auto-Oscillations with a Single Spin Sensor.
Nano Lett
January 2025
Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart, 70569, Germany.
Spin Hall nano-oscillators convert DC to magnetic auto-oscillations in the microwave regime. Current research on these devices is dedicated to creating next-generation energy-efficient hardware for communication technologies. Despite intensive research on magnetic auto-oscillations within the past decade, the nanoscale mapping of those dynamics remained a challenge.
View Article and Find Full Text PDFThe quantum anomalous Hall effect in two-dimensional hexagonal monolayers studied by first-principles calculations.
iScience
January 2025
School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
The quantum anomalous Hall effect (QAHE) demonstrates the potential for achieving quantized Hall resistance without the need for an external magnetic field, making it highly promising for reducing energy loss in electronic devices. Its realization and research rely heavily on precise first-principles calculations, which are essential for analyzing the electronic structures and topological properties of novel two-dimensional (2D) materials. This review article explores the theoretical progress of QAHE in 2D hexagonal monolayers with strong spin-orbit coupling and internal magnetic ordering.
View Article and Find Full Text PDFNovel Magnetic-Field-Free Switching Behavior in vdW-Magnet/Oxide Heterostructure.
Adv Mater
January 2025
Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide FeGeTe/SrTiO heterostructure.
View Article and Find Full Text PDFSpin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers.
Sci Rep
January 2025
Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, SE-10691, Stockholm, Sweden.
Non-trivial band topology along with magnetism leads to different novel quantum phases. When time-reversal symmetry is broken in three-dimensional topological insulators (TIs) through, e.g.
View Article and Find Full Text PDFSelective area molecular beam epitaxy of InSb on InP(111)B: from thin films to quantum nanostructures.
Nanotechnology
January 2025
IEMN, IEMN, Avenue Poincaré, CS60069, Villeneuve-d'Ascq, 59655, FRANCE.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)B substrates with molecular beam epitaxial growth. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be achieved using a very high Sb/In flux ratio.
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