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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.
Nanoscale Res Lett
April 2011
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China.
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.
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