Publications by authors named "d'Ambrumenil N"

The magnetic behaviour of gadolinium gallium garnet in an external magnetic field at zero temperature is considered. For high fields a classical spin model of the gadolinium ions predicts a spin configuration that is periodic at the level of the smallest repeating unit cell. The quantum version of the model is treated via a truncated Holstein-Primakoff transformation with axes defined by the classical spin configuration, and the magnon excitation bands are calculated.

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Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory.

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We report the results of neutron diffraction and inelastic neutron scattering on a powder sample of Gd_{3}Ga_{5}O_{12} at high magnetic fields. Analysis of the diffraction data shows that in high fields (B≳1.8 T) the spins are not fully aligned, but are canted slightly as a result of the dipolar interaction.

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We consider the effect of disorder on the themopower in quantum Hall systems. For a sample in the Corbino geometry, where dissipative currents are not carried by edge states, we find that thermopower behaves at high temperatures like a system with a gap and has a maximum which increases as the temperature is reduced. At lower temperatures this maximum reduces as a function of temperature as a result of tunneling across saddle points in the background potential.

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We present a model of dissipative transport in the fractional quantum Hall regime. Our model takes account of tunneling through saddle points in the effective potential for excitations created by impurities. We predict the temperature range over which activated behavior is observed and explain why this range nearly always corresponds to around a factor two in temperature in both integer quantum Hall and fractional quantum Hall systems.

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Provided the measuring time is short enough, the full counting statistics (FCS) of the charge pumped across a barrier as a result of a series of voltage pulses are shown to be equivalent to the geometry of two planes. This formulation leads to the FCS without the need for the usual nonequilibrium (Keldysh) transport theory or the direct computation of the determinant of an infinite-dimensional matrix. In the particular case of the application of N Lorentzian pulses, we show the computation of the FCS reduces to the diagonalization of an N x N matrix.

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We report exact nonperturbative results for the Fermi-edge singularity in the absorption spectrum of an out-of-equilibrium tunnel junction. We consider two metals with chemical potential difference V separated by a tunneling barrier containing a defect, which exists in one of two states. When it is in its excited state, tunneling through the otherwise impermeable barrier is possible.

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