Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition.

We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.

Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.

Direct epitaxial growth of group III-V light sources with excellently thermal performance on silicon photonics chips promises low-cost, low-power-consumption, high-performance photonic integrated circuits. Here, we report on the achievement of ultra-high thermal stability 1.3 µm InAs/GaAs quantum dot (QD) lasers directly grown on an on-axis Si (001) with a record-high continuous-wave (CW) operating temperature of 150 °C.

Significantly enhanced performance of InAs/GaAs quantum dot lasers on Si(001) via spatially separated co-doping.

We report the significantly enhanced performance of InAs/GaAs quantum dot (QD) lasers on Si(001) by spatially separated co-doping, including n-doping in the QDs and p-doping in the barrier layers simultaneously. The QD lasers are a ridge waveguide of 6 × 1000 µm containing five InAs QD layers. Compared with p-doped alone laser, the co-doped laser exhibits a large reduction in threshold current of 30.

Optically Rough and Physically Flat Transparent Conductive Substrates with Strong Far-Field Scattering.

Optically rough and physically flat transparent conductive (OR-PF) substrates facilitate the performance improvement of optoelectronic devices and functional glasses via simultaneously enabling high-quality growth of functional layers and effective light management. This paper studies the effect of the interface morphology of the hole array pattern (HAP) and the pillar array pattern (PAP) on the far-field scattering properties of OR-PF substrates fabricated by spin-coating Al-doped ZnO (AZO) on nanoimprint-patterned glasses for improving the performance of superstrate-type thin-film solar cells. Theoretical calculation based on bidirectional scattering distribution function predicts that HAP with a period of 1.

Low-loss c-axis oriented ZnMgO nonlinear planar optical waveguides on silicon.

A material platform of highly c-axis oriented ZnMgO thin films is developed for nonlinear planar waveguides and electro-optic modulators on Si. Mg content in the film greatly influences the quality of film growth. The second harmonic generation measurement and Maker-fringe analysis reveal that the second-order nonlinear susceptibility tensor element χ of the annealed ZnMgO is approximately 4.

Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation.

We report on the design, fabrication, and characterization of single longitudinal mode InAs/GaAs quantum dot lasers emitting at the 1.3 µm communication band. The influence of simply etched surface high-order gratings in the ridge of the Fabry-Perot lasers has been studied.

Surface Modification of Al-Doped ZnO Transparent Conducive Thin Films with Polycrystalline Zinc Molybdenum Oxide.

High-work function (WF) transparent conductive thin films improve the performance of solar cells and organic light-emitting diodes by facilitating interfacial charge carrier transport. Al-doped ZnO (AZO) becomes a very promising transparent conductive material because of nontoxicity, abundant material resources, and low cost. To increase the WF of AZO without enhancing the series resistance of the device, a high-WF and low-resistance surface modifier of polycrystalline zinc molybdenum oxide (ZMO) was developed by utilizing thermal evaporation of MoO on the surface of AZO and a subsequent two-step annealing treatment.