Asymmetric Full-Color Vectorial Meta-holograms Empowered by Pairs of Exceptional Points.

Holography holds tremendous promise in applications such as immersive virtual reality and optical communications. With the emergence of optical metasurfaces, planar optical components that have the remarkable ability to precisely manipulate the amplitude, phase, and polarization of light on the subwavelength scale have expanded the potential applications of holography. However, the realization of metasurface-based full-color vectorial holography remains particularly challenging.

Creating pairs of exceptional points for arbitrary polarization control: asymmetric vectorial wavefront modulation.

Exceptional points (EPs) can achieve intriguing asymmetric control in non-Hermitian systems due to the degeneracy of eigenstates. Here, we present a general method that extends this specific asymmetric response of EP photonic systems to address any arbitrary fully-polarized light. By rotating the meta-structures at EP, Pancharatnam-Berry (PB) phase can be exclusively encoded on one of the circular polarization-conversion channels.

Spin Defects in hBN assisted by Metallic Nanotrenches for Quantum Sensing.

The omnipresence of hexagonal boron nitride (hBN) in devices embedding two-dimensional materials has prompted it as the most sought after platform to implement quantum sensing due to its testing while operating capability. The negatively charged boron vacancy () in hBN plays a prominent role, as it can be easily generated while its spin population can be initialized and read out by optical means at room-temperature. But the lower quantum yield hinders its widespread use as an integrated quantum sensor.

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas.

The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.

Interplay of Purcell effect and extraction efficiency in CsPbBr quantum dots coupled to Mie resonators.

Inorganic halide perovskite quantum dots have risen in recent years as efficient active materials in numerous optoelectronic applications ranging from solar cells to light-emitting diodes and lasers, and have lately been tested as quantum emitters. Perovskite quantum dots are often coupled to photonic structures either to enhance their emission properties, by accelerating their emission rate thanks to the Purcell effect, or to increase light extraction. From a theoretical point of view, the first effect is often considered at the single-dipole level while the latter is often treated at the mesoscopic level, except possibly for quantum emitters.

Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride.

Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy.

Plasmonic topological metasurface by encircling an exceptional point.

Resonant scattering, guided mode propagation phase, and/or orientation-dependent phase retardations are the three main mechanisms used to date to conceive optical metasurfaces. Here, we introduce an additional degree of freedom to address optical phase engineering by exploiting the topological features of non-Hermitian matrices operating near their singular points. Choosing metasurface building blocks to encircle a singularity following an arbitrarily closed trajectory in parameter space, we engineered a topologically protected full 2π-phase on a specific reflected polarization channel.

Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials.

The evolution of electrical resistance as function of defect concentration is examined for the unipolar-conducting oxides CdO,-GaO, InO, SnOand ZnO in order to explore the predictions of the amphoteric defect model. Intrinsic defects are introduced by ion irradiation at cryogenic temperatures, and the resistance is measured in-situ by current-voltage sweeps as a function of irradiation dose. Temperature dependent Hall effect measurements are performed to determine the carrier concentration and mobility of the samples before and after irradiation.

Voigt Exceptional Points in an Anisotropic ZnO-Based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity.

Voigt points represent propagation directions in anisotropic crystals along which optical modes degenerate, leading to a single circularly polarized eigenmode. They are a particular class of exceptional points. Here, we report the fabrication and characterization of a dielectric, anisotropic optical microcavity based on nonpolar ZnO that implements a non-Hermitian system and mimics the behavior of Voigt points in natural crystals.

Displacement Talbot lithography for nano-engineering of III-nitride materials.

Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials.

Edge-emitting polariton laser and amplifier based on a ZnO waveguide.

We demonstrate edge-emitting exciton-polariton (polariton) laser operation from 5 to 300 K and polariton amplifiers based on polariton modes within ZnO waveguides. The guided mode dispersion below and above the lasing threshold is directly measured using gratings placed on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be smaller than that expected for radiative polaritons in planar ZnO microcavities below 150 K and comparable above.

Intentional polarity conversion of AlN epitaxial layers by oxygen.

Nitride materials (AlN, GaN, InN and their alloys) are commonly used in optoelectronics, high-power and high-frequency electronics. Polarity is the essential characteristic of these materials: when grown along c-direction, the films may exhibit either N- or metal-polar surface, which strongly influences their physical properties. The possibility to manipulate the polarity during growth allows to establish unique polarity in nitride thin films and nanowires for existing applications but also opens up new opportunities for device applications, e.

Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates.

Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of AlN nanocolumns by plasma assisted molecular beam epitaxy on polar (0001) and semi-polar (11-22) GaN/sapphire templates. The resulting AlN nanocolumns are vertically oriented with semi-polar {1-103} top facets when grown on (0001) GaN/sapphire, or oriented at 58° from the template normal and exposing {1-100} non-polar top facets when growing on (11-22) GaN/sapphire, in both cases reaching filling factors ≥80%.

From excitonic to photonic polariton condensate in a ZnO-based microcavity.

We report exciton-polariton condensation in a new family of fully hybrid ZnO-based microcavity demonstrating the best-quality ZnO material available (a bulk substrate), a large quality factor (~4000) and large Rabi splittings (~240 meV). Condensation is achieved between 4 and 300 K and for excitonic fractions ranging between 17% and 96%, which corresponds to a tuning of the exciton-polariton mass, lifetime, and interaction constant by 1 order of magnitude. We demonstrate mode switching between polariton branches allowing, just by controlling the pumping power, to tune the photonic fraction by a factor of 4.

Surface band-gap narrowing in quantized electron accumulation layers.

An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented.

Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires.

Low-area density ZnO nanowire arrays, growing perpendicularly to the substrate, are synthesized with high-pressure pulsed laser deposition. The introduction of a ZnO buffer layer enables us to fabricate individual nanowires several micrometres apart (area density<0.1 nanowire microm(-2)), suppressing any shadowing effect by neighbouring nanowires during subsequent growth.

Anisotropic chemical etching of semipolar [1011]/[101+1] ZnO crystallographic planes: polarity versus dangling bonds.

ZnO thin films grown by metal-organic vapor phase epitaxy along the nonpolar [formula: see text] direction and exhibiting semipolar [formula: see text] facets have been chemically etched with HCl. In order to get an insight into the influence of the ZnO wurtzite structure in the chemical reactivity of the material, Kelvin probe microscopy and convergent beam electron diffraction have been employed to unambiguously determine the absolute polarity of the facets, showing that [formula: see text] facets are unstable upon etching in an HCl solution and transform into [formula: see text] planes. In contrast, [formula: see text] facets undergo homogeneous chemical etching perpendicular to the initial crystallographic plane.

Formation and rupture of Schottky nanocontacts on ZnO nanocolumns.

In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force.

Nanogoniometry with scanning force microscopy: a model study of CdTe thin films.

In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets.

Polarity effects on ZnO films grown along the nonpolar [1120] direction.

The surface electrical properties of ZnO thin films grown along the nonpolar [1120] direction have been investigated by Kelvin probe microscopy on a nanometer scale. Two different charge domains, with a 75 meV work function difference, coexist within the ZnO surface, which is covered by rhombohedral pyramids whose sidewalls are shown to be {1011}-type planes. The presence and relative orientation of the two kinds of charge domains are explained in terms of the atomic arrangement at the {1011} polar surfaces.