Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La Sr MnO (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (T = 360 K, for x = 1/3), and chemical stability.
View Article and Find Full Text PDFThe peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic LaSrMnO electrodes separated by an ultrathin ferroelectric BaTiO tunnel barrier, where a head-to-head domain wall is constrained.
View Article and Find Full Text PDFThe magnetoresistance of La0.7Sr0.3MnO3/SrTiO3 superlattices with magnetic field rotating out-of-plane shows unexpected peaks for in-plane fields.
View Article and Find Full Text PDFReducing the operation temperature of solid oxide fuel cells is a major challenge towards their widespread use for power generation. This has triggered an intense materials research effort involving the search for novel electrolytes with higher ionic conductivity near room temperature. Two main directions are being currently followed: the use of doping strategies for the synthesis of new bulk materials and the implementation of nanotechnology routes for the fabrication of artificial nanostructures with improved properties.
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