A novel machine learning-based imputation strategy for missing data in step-stress accelerated degradation test.

The presence of missing data is a significant data quality issue that negatively impacts the accuracy and reliability of data analysis. This issue is especially relevant in the context of accelerated tests, particularly for step-stress accelerated degradation tests. While missing data can occur due to objective factors or human error, high missing rate is an inevitable pattern of missing data that will occur during the conversion process of accelerated test data.

Photoelectric characteristics of hydrogen-terminated polycrystalline diamond MESFETs.

In the field of diamond MESFETs, this work is what we believe to be the first to investigate the optoelectronic properties of hydrogen-terminated polycrystalline diamond MESFETs under visible and near-UV light irradiation. It is shown that the diamond MESFETs are well suited for weak light detection in the near-ultraviolet region around the wavelength of 368 nm, with a responsivity of 6.14 × 10 A/W and an external quantum efficiency of 2.

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains.

Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe.

Orientation-dependent chemistry and band-bending of Ti on polar ZnO surfaces.

Orientation-dependent reactivity and band-bending are evidenced upon Ti deposition (1-10 Å) on polar ZnO(0001)-Zn and ZnO(0001[combining macron])-O surfaces. At the onset of the Ti deposition, a downward band-bending was observed on ZnO(0001[combining macron])-O while no change occurred on ZnO(0001)-Zn. Combining this with the photoemission analysis of the Ti 2p core level and Zn L(L)MM Auger transition, it is established that the Ti/ZnO reaction is of the form Ti + 2ZnO → TiO + 2Zn on ZnO(0001)-Zn and Ti + yZnO → TiZnO + (y - x)Zn on ZnO(0001[combining macron])-O.